Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSS316NH6327
Manufacturer
InfineonManufacturer Product Number
BSS316NH6327
Description
场效应管(MOSFET) 500mW 30V 1.4A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Power | 0.5W |
| Input Capacitance | 7pF |
| Drain-Source On-Resistance | 0.16Ω |
| Drain-Source Saturation Current | 1.4 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,985
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1044 | |
| 50+ | $ 0.0863 | |
| 150+ | $ 0.0766 | |
| 500+ | $ 0.0696 | |
| 3000+ | $ 0.0599 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSS316NH6327XTSA1
场效应管(MOSFET) 500mW 30V 1.4A 1个N沟道 SOT-23
Infineon
BSS316NH6327XTSA1
N-Channel 30 V 1.4 A 160 mO 0.6 nC OptiMOS 2 Small Signal Transistor - SOT-23
Infineon
BSS4130AHZGT116
雙極結晶體管 - BJT TRANSISTOR FOR LOW FREQ AMP,
ROHM
BSS4130AHZGT116
--
ROHM