Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSS316NH6327XTSA1
Manufacturer
InfineonManufacturer Product Number
BSS316NH6327XTSA1
Description
场效应管(MOSFET) 500mW 30V 1.4A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Input Capacitance | 7pF |
| Drain-Source On-Resistance | 0.16Ω |
| Drain-Source Saturation Current | 1.4 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 498
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0849 | |
| 200+ | $ 0.0543 | |
| 1500+ | $ 0.0473 | |
| 3000+ | $ 0.0418 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSS4130AHZGT116
雙極結晶體管 - BJT TRANSISTOR FOR LOW FREQ AMP,
ROHM
BSS4130AHZGT116
--
ROHM
BSS4130AT116
--
ROHM
BSS5130AHZGT116
雙極結晶體管 - BJT TRANSISTOR FOR LOW FREQ AMP,
ROHM