Manufacturer
InfineonManufacturer Product Number
BSP321PH6327XTSA1
Description
晶体管: P-MOSFET; 单极; -100V; -790mA; 1.8W; PG-SOT223; SIPMOS™
Manufacturer Standard Lead Time
3-5
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Power | 1.8W |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 100 V |
| Gate Charge | 12nC@10V |
| Threshold Voltage | 4V @ 380µA |
| Input Capacitance | 319pF@25V |
| Continuous Drain Current | 980mA |
| On-Resistance | 900mΩ@980mA, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4484 |
Minimum:1/Multiple:1
Total amount: