Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSP322PH6327XTSA1
Manufacturer
InfineonManufacturer Product Number
BSP322PH6327XTSA1
Description
MOSFET P-CH 100V 1A SOT-223
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 1.8W |
| Gate-Source Breakdown Voltage | 100V |
| Drain-Source Saturation Current | 1A |
| Drain-Source On-Resistance | 0.8 Ω |
| Input Capacitance | 51pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 772
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0611 | |
| 5+ | $ 0.6364 | |
| 25+ | $ 0.5737 | |
| 100+ | $ 0.5069 | |
| 250+ | $ 0.4540 | |
| 1000+ | $ 0.4247 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BSP324 H6327
N-CH MOS-FET 0,17A 400V SOT223
Infineon
BSP324H6327XTSA1
MOSFET SIPMOS Pwr 400V 25Ohm 170mA
Infineon
BSP324H6327XTSA1
MOSFET SIPMOS Pwr 400V 25Ohm 170mA
Infineon
BSP33,115
单晶体管 双极 PNP 80 V 1 A 1.3 W SOT-223 表面安装
Nexperia