Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC0910NDIATMA1
Manufacturer
InfineonManufacturer Product Number
BSC0910NDIATMA1
Description
晶体管: N-MOSFET; 单极; 25V; 40A; 2.5W; PG-TISON-8; OptiMOS™
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Saturation Current | 11 A |
| Gate-Source Breakdown Voltage | 25V |
| Drain-Source On-Resistance | 0.0059Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 500
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.1948 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC0911NDATMA1
MOSFET LV POWER MOS
Infineon
BSC0921NDIATMA1
MOSFET LV POWER MOS
Infineon
BSC0923NDI
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON T/R
Infineon
BSC0923NDI
场效应管(MOSFET) BSC0923NDI TISON-8-EP(6x5)
Infineon
