Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC0921NDIATMA1
Manufacturer
InfineonManufacturer Product Number
BSC0921NDIATMA1
Description
MOSFET LV POWER MOS
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 1 W |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2V@250μA |
| Type | Dual N-channel asymmetric |
| On-Resistance | 5mΩ@20A, 10V |
| Continuous Drain Current | 17A,31A |
| Input Capacitance | 1025pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2616 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC0923NDI
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON T/R
Infineon
BSC0923NDI
场效应管(MOSFET) BSC0923NDI TISON-8-EP(6x5)
Infineon
BSC0923NDIATMA1
晶体管: N-MOSFET; 单极; 30V; 40A; 2.5W; PG-TISON-8; OptiMOS™
Infineon
BSC0924NDI
场效应管(MOSFET) BSC0924NDI TISON-8-EP(6x5)
Infineon
