Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BSC0901NSATMA1
Manufacturer
InfineonManufacturer Product Number
BSC0901NSATMA1
Description
晶体管: N-MOSFET; 单极; 30V; 100A; 69W; PG-TDSON-8; OptiMOS™
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Gate Charge | 44nC@10V |
| Power | 2.5 W, 69 W |
| Input Capacitance | 2800 pF@15 V |
| On-Resistance | 1.9 mΩ @ 30 A, 10 V |
| Continuous Drain Current | 28A, 100A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.9245 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBSC0901NSI
Trans MOSFET N-CH 30V 28A 8-Pin TDSON T/R
Infineon
BSC0901NSIATMA1
晶体管: N-MOSFET; 单极; 30V; 100A; 69W; PG-TDSON-8; OptiMOS™
Infineon
BSC0902NS
场效应管(MOSFET) 2.5W 30V 24A 1个N沟道 TDSON-8-EP(5x6)
Infineon
BSC0902NS-HXY
--
HUAXUANYANG
