Manufacturer
InfineonManufacturer Product Number
BSC0901NSIATMA1
Description
晶体管: N-MOSFET; 单极; 30V; 100A; 69W; PG-TDSON-8; OptiMOS™
Manufacturer Standard Lead Time
3-5
Detailed Description
晶体管: N-MOSFET; 单极; 30V; 100A; 69W; PG-TDSON-8; OptiMOS™
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Power | 2.5 W, 69 W |
| Gate Charge | 20nC@15V |
| Continuous Drain Current | 28A, 100A |
| On-Resistance | 2mΩ@30A, 10V |
| Input Capacitance | 2600pF@15V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6977 |
Minimum:1/Multiple:1
Total amount: