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BSC082N10LSGATMA1
Manufacturer
InfineonManufacturer Product Number
BSC082N10LSGATMA1
Description
MOSFET N-CH 100V 100A TDSON-8
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Power | 156W |
| Gate Charge | 104 nC @ 10 V |
| Continuous Drain Current | 13.8A,100A |
| On-Resistance | 8.2mΩ@100A，10V |
| Threshold Voltage | 2.4V@110µA |
| Input Capacitance | 7400pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,511
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 2.8826 | |
| 50+ | $ 2.0136 | |
| 250+ | $ 1.6390 | |
| 1000+ | $ 1.4872 | |
| 3000+ | $ 1.4733 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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BSC0901NSATMA1
晶体管: N-MOSFET; 单极; 30V; 100A; 69W; PG-TDSON-8; OptiMOS™
Infineon
