Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFP 640ESD H6327
Manufacturer
InfineonManufacturer Product Number
BFP 640ESD H6327
Description
射頻雙極晶體管 RF BIP TRANSISTORS
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| DC Gain (hFE@Ic, Vce) | 110 |
| Jing Ti Guan Type | Bipolar |
| Te Zheng Frequency | 45 GHz |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 4.1V |
| Ji She Ji Ji Chuan Voltage（vceo） | 4.1V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,858
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2268 | |
| 10+ | $ 0.7645 | |
| 100+ | $ 0.4985 | |
| 500+ | $ 0.3829 | |
| 1000+ | $ 0.3565 | |
| 3000+ | $ 0.2841 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllBFP181E7764HTSA1
Trans RF BJT NPN 12V 0.02A Automotive 4-Pin(3+Tab) SOT-143 T/R
Infineon
BFP182WH6327XTSA1
RF-晶体管-NPN-12V-35mA-8GHz-250mW-表面贴装型-PG-SOT343-4
Infineon
BFP182WH6327XTSA1
TRANS RF NPN 12V SOT343
Infineon
BFP183E7764HTSA1
三极管(BJT) 250mW 12V 65mA NPN SOT-143
Infineon