Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFP182WH6327XTSA1
Manufacturer
InfineonManufacturer Product Number
BFP182WH6327XTSA1
Description
RF-晶体管-NPN-12V-35mA-8GHz-250mW-表面贴装型-PG-SOT343-4
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -65℃~+150℃ |
| Ji Dian Ji Current（ic） | 35mA |
| Ji She Ji Ji Chuan Voltage（vceo） | 12V |
| DC Gain (hFE@Ic, Vce) | 70 |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 12V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 7,830
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1086 | |
| 200+ | $ 0.0822 | |
| 1500+ | $ 0.0710 | |
| 3000+ | $ 0.0654 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
BFP183E7764HTSA1
三极管(BJT) 250mW 12V 65mA NPN SOT-143
Infineon
BFP183E7764HTSA1
Trans RF BJT NPN 12V 0.065A Automotive 4-Pin(3+Tab) SOT-143 T/R
Infineon
BFP183WH6327XTSA1
--
Infineon
BFP183WH6327XTSA1
TRANS RF NPN 12V SOT343
Infineon