Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ZXTP2008GTA
Manufacturer
DiodesManufacturer Product Number
ZXTP2008GTA
Description
雙極性晶體管- BJT 30V PNP Low Sat
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Ji Dian Ji Jie Zhi Current（icbo） | 20nA |
| Jing Ti Guan Type | PNP |
| Power | 3W |
| Ji She Ji Ji Chuan Voltage（vceo） | 30 V |
| Te Zheng Frequency | 110MHz |
| DC Gain (hFE@Ic, Vce) | 100 @ 1A, 1V |
| Ji Dian Ji Current（ic） | 5.5 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 210mV@500mA，5.5A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 814
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0820 | |
| 10+ | $ 0.7380 | |
| 100+ | $ 0.5222 | |
| 500+ | $ 0.5027 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllZXTP2008ZTA
三极管(BJT) 2.1W 30V 5.5A PNP SOT-89-3
Diodes
ZXTP2008ZTA
PNP 30V TRANSISTOR
Diodes
ZXTP2008ZTA
两极晶体管 - BJT 30V PNP Low Sat
Diodes
ZXTP2009ZTA
三极管(BJT) 2.1W 40V 5.5A PNP SOT-89-3
Diodes