Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ZXTP2008ZTA
Manufacturer
DiodesManufacturer Product Number
ZXTP2008ZTA
Description
两极晶体管 - BJT 30V PNP Low Sat
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Ji Dian Ji Jie Zhi Current（icbo） | 20nA |
| Jing Ti Guan Type | PNP |
| Ji She Ji Ji Chuan Voltage（vceo） | 30 V |
| Power | 2.1W |
| Te Zheng Frequency | 110MHz |
| DC Gain (hFE@Ic, Vce) | 100 @ 1A, 1V |
| Ji Dian Ji Current（ic） | 5.5 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 175 mV @ 500 mA, 5.5 A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 290
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9957 | |
| 10+ | $ 0.7227 | |
| 100+ | $ 0.4985 | |
| 500+ | $ 0.4581 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllZXTP2009ZTA
三极管(BJT) 2.1W 40V 5.5A PNP SOT-89-3
Diodes
ZXTP2009ZTA
两极晶体管 - BJT 40V PNP Low Sat
Diodes
ZXTP2012ASTZ
两极晶体管 - BJT PNP 60V 3.5A 3-PIN
Diodes
ZXTP2012GTA
两极晶体管 - BJT 60V PNP Low Sat
Diodes