Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ZXMN6A09GTA
Manufacturer
DiodesManufacturer Product Number
ZXMN6A09GTA
Description
MOSFET N-CH 60V 6.9A SOT223
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Power | 2W |
| Drain-Source On-Resistance | 0.045Ω |
| Drain-Source Saturation Current | 5.4A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 611
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.2476 | |
| 10+ | $ 1.4329 | |
| 50+ | $ 0.9804 | |
| 200+ | $ 0.8787 | |
| 500+ | $ 0.7770 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
ZXMN6A09KTC
绝缘栅场效应管（MOSFET）
Diodes
ZXMN6A11DN8TA
场效应管(MOSFET) 1.8W 60V 2.5A 2个N沟道 SOIC-8
Diodes
ZXMN6A11DN8TA
Dual N-Channel 60V MOSFET (UMOS)
Diodes
ZXMN6A11DN8TA
MOSFET Dl 60V N-Chnl UMOS
Diodes