Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ZXMN6A11DN8TA
Manufacturer
DiodesManufacturer Product Number
ZXMN6A11DN8TA
Description
场效应管(MOSFET) 1.8W 60V 2.5A 2个N沟道 SOIC-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source On-Resistance | 0.14Ω |
| Power | 0.0021W |
| Drain-Source Saturation Current | 2.1A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 156
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6030 | |
| 10+ | $ 0.4428 | |
| 30+ | $ 0.3467 | |
| 100+ | $ 0.3064 | |
| 500+ | $ 0.2827 | |
| 1000+ | $ 0.2702 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllZXMN6A11GTA
场效应管(MOSFET) 2W 60V 3.1A 1个N沟道 SOT-223-3
Diodes
ZXMN6A11GTA
MOSFET 60V N-Chnl UMOS
Diodes
ZXMN6A11ZTA
ZXMN6A11Z Series 60 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-89
Diodes
ZXMN6A11ZTA
场效应管(MOSFET) 1.5W 60V 2.7A 1个N沟道 SOT-89-3
Diodes