Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DMN2014LHAB-7
Manufacturer
DiodesManufacturer Product Number
DMN2014LHAB-7
Description
场效应管(MOSFET) 800mW 20V 9A 2个N沟道 U-DFN2030-6B-EP
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Drain-Source Voltage | 20V |
| Input Capacitance | 1550 pF @ 10 V |
| Threshold Voltage | 1.1 V @ 250 µA |
| Continuous Drain Current | 9A |
| Power | 800mW |
| Gate Charge | 16nC@4.5V |
| On-Resistance | 13mΩ@4A,4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,565
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1504 | |
| 200+ | $ 0.1142 | |
| 1500+ | $ 0.0989 | |
| 3000+ | $ 0.0919 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN2015UFDE-7
MOSFET N-CH 20V 10.5A U-DFN
Diodes
DMN2015UFDE-7
场效应管(MOSFET) 660mW 20V 10.5A 1个N沟道 UDFN2020-6-EP
Diodes
DMN2015UFDF-7
表面贴装 N 沟道 20V 15.2A (Ta) 1.8W（Ta） U-DFN2020-6
Diodes
DMN2015UFDF-7
Trans MOSFET N-CH 20V 11.6A 6-Pin UDFN EP T/R
Diodes
