Manufacturer
DiodesManufacturer Product Number
DMN2015UFDE-7
Description
场效应管(MOSFET) 660mW 20V 10.5A 1个N沟道 UDFN2020-6-EP
Manufacturer Standard Lead Time
2-3
Detailed Description
场效应管(MOSFET) 660mW 20V 10.5A 1个N沟道 UDFN2020-6-EP
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1.1 V @ 250 µA |
| Power | 660mW |
| Continuous Drain Current | 10.5A |
| Gate Charge | 45.6nC@10V |
| On-Resistance | 11.6 mΩ @ 8.5 A, 4.5 V |
| Input Capacitance | 1779 pF @ 10 V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1239 | |
| 200+ | $ 0.0849 | |
| 1500+ | $ 0.0766 | |
| 3000+ | $ 0.0710 |
Minimum:1/Multiple:1
Total amount: