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DMN10H170SVT-7
Manufacturer
DiodesManufacturer Product Number
DMN10H170SVT-7
Description
MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-Channel |
| Drain-Source Voltage | 100 V |
| Power | 1.2 W |
| Continuous Drain Current | 2.6A |
| Gate Charge | 9.7nC@10V |
| On-Resistance | 160mΩ@5A, 10V |
| Input Capacitance | 1167pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 41,810
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.3619 | |
| 10+ | $ 0.8286 | |
| 100+ | $ 0.5682 | |
| 500+ | $ 0.4456 | |
| 1000+ | $ 0.4011 | |
| 3000+ | $ 0.3036 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMN10H170SVTQ-7
MOSFET N-CH 100V 2.6A TSOT26
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DMN10H170SVTQ-7
MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A
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MOSFET N-CH 100V 2.6A TSOT26
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DMN10H220L
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TECH PUBLIC
