Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
DMN10H170SVTQ-7
Manufacturer
DiodesManufacturer Product Number
DMN10H170SVTQ-7
Description
MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Power | 1.2 W |
| Continuous Drain Current | 2.6A |
| Gate Charge | 9.7nC@10V |
| Input Capacitance | 1167pF@25V |
| On-Resistance | 160mΩ@5A，10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,678
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6376 | |
| 10+ | $ 1.0193 | |
| 100+ | $ 0.6629 | |
| 500+ | $ 0.5083 | |
| 1000+ | $ 0.4581 | |
| 3000+ | $ 0.3829 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
DMN10H220L
--
TECH PUBLIC
DMN10H220L-13
Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23
Diodes
DMN10H220L-13
MOSFET 100V N-Ch Enh FET 16Vgs 1.6A 1.3W
Diodes
DMN10H220L-7
场效应管(MOSFET) 1.3W 100V 1.4A 1个N沟道 SOT-23
Diodes
