Manufacturer
DiodesManufacturer Product Number
DMN10H170SVT-7
Description
场效应管(MOSFET) 1.2W 100V 2.6A 1个N沟道 TSOT-26
Manufacturer Standard Lead Time
2-3
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-Channel |
| Drain-Source Voltage | 100 V |
| Power | 1.2 W |
| Continuous Drain Current | 2.6A |
| Gate Charge | 9.7nC@10V |
| On-Resistance | 160mΩ@5A, 10V |
| Input Capacitance | 1167pF@25V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1086 | |
| 200+ | $ 0.0752 | |
| 1500+ | $ 0.0668 | |
| 3000+ | $ 0.0627 |
Minimum:1/Multiple:1
Total amount: