Manufacturer
DiodesManufacturer Product Number
DMG6602SVTQ-7
Description
场效应管(MOSFET) 840mW 30V 3.4A;2.8A 1个N沟道+1个P沟道 TSOT-23-6
Manufacturer Standard Lead Time
2-3
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel and P-channel |
| Drain-Source Voltage | 30V |
| Power | 840mW |
| Threshold Voltage | 2.3 V @ 250 µA |
| Continuous Drain Current | 3.4 A, 2.8 A |
| Input Capacitance | 400 pF @ 15 V |
| On-Resistance | 60mΩ @ 3.1A, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1337 | |
| 200+ | $ 0.0919 | |
| 1500+ | $ 0.0822 | |
| 3000+ | $ 0.0766 |
Minimum:1/Multiple:1
Total amount: