Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
AOSD26313C
Manufacturer
AOSManufacturer Product Number
AOSD26313C
Description
Transistor: N/P-MOSFET; unipolar; -30/30V; -4.4/5.4A; Idm: -23÷34A
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 30V |
| Power | 1.7 W |
| Type | Complementary N-channel and P-channel |
| Continuous Drain Current | 7A,5.7A |
| Threshold Voltage | 2.3V@250µA,2.2V@250µA |
| Input Capacitance | 600pF@15V,1100pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,962
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 3+ | $ 0.3941 | |
| 25+ | $ 0.2395 | |
| 100+ | $ 0.2117 | |
| 500+ | $ 0.1908 | |
| 3000+ | $ 0.1769 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllAOSD32334C
--
AOS
AOSD62666E
场效应管(MOSFET) 2.5W 60V 9.5A 2个N沟道 SOIC-8
AOS
AOSD62666E
Mosfet Array 2 N-Channel (Dual) 60V 9.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
AOS
AOSP21307
场效应管(MOSFET) 3.1W 30V 14A 1个P沟道 SOIC-8
AOS
