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AOSP21307
Manufacturer
AOSManufacturer Product Number
AOSP21307
Description
场效应管(MOSFET) 3.1W 30V 14A 1个P沟道 SOIC-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Gate Charge | 50nC@10V |
| Drain-Source Voltage | 30V |
| Power | 3.1W |
| Continuous Drain Current | 14 A |
| Threshold Voltage | 2.3 V @ 250 µA |
| Input Capacitance | 1995pF@15V |
| On-Resistance | 11.5mΩ@14A，10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,320
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.2256 | |
| 50+ | $ 0.1977 | |
| 150+ | $ 0.1866 | |
| 500+ | $ 0.1713 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllAOSP21321
场效应管(MOSFET) 3.1W 30V 11A 1个P沟道 SOIC-8
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AOSP21321
表面贴装 P 沟道 30V 11A（Ta） 3.1W（Ta） 8-SOIC
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AOSP21321
Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8
AOS
AOSP21321-HXY
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HUAXUANYANG
