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2N7000
Manufacturer
JSCJManufacturer Product Number
2N7000
Description
场效应管(MOSFET) 400mW 60V 200mA 1个N沟道 TO-92-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 200mA |
| Power | 400 mW |
| Threshold Voltage | 3V@1mA |
| On-Resistance | 5Ω@10V, 500mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 6,364
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0863 | |
| 200+ | $ 0.0292 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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场效应管(MOSFET) 400mW 60V 200mA 1个N沟道 TO-92-3
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2N7000-D26Z
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N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor-TO-92
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N沟道增强模式场效应晶体管60V，200mA，5Ω
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