Manufacturer
VISHAYManufacturer Product Number
VSMY98545ADS
Description
High Power Infrared Emitting Diode, 850 nm, Surface Emitter
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -40℃~85℃ |
| Viewing Angle | 90° |
| Zheng Xiang Current | 1A |
| Feng Zhi Bo Chang | 850 nm |
| Forward Voltage | 3.1V |
| Fu She Qiang Du | 400mW/sr@1A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 7.1145 | |
| 10+ | $ 5.6398 | |
| 25+ | $ 5.1037 | |
| 50+ | $ 4.7012 | |
| 100+ | $ 4.2960 | |
| 500+ | $ 3.7919 |
Minimum:1/Multiple:1
Total amount: