Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TP0610K-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
TP0610K-T1-GE3
Description
MOSFET P-CH 60V 185MA TO-236
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 0.35W |
| Gate-Source Breakdown Voltage | 60V |
| Drain-Source On-Resistance | 6 Ω |
| Drain-Source Saturation Current | 0.185A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 7
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5375 | |
| 10+ | $ 0.3718 | |
| 100+ | $ 0.2702 | |
| 250+ | $ 0.2381 | |
| 500+ | $ 0.2172 | |
| 1000+ | $ 0.1991 | |
| 3000+ | $ 0.1741 | |
| 6000+ | $ 0.1601 | |
| 9000+ | $ 0.1532 | |
| 21000+ | $ 0.1393 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllTP0610T-G
晶体管: P-MOSFET; -60V; -50mA; SOT23-3
Microchip
TP0610T-G
--
Microchip
TP0620N3-G
TP0620 Series 200 V 175 mA P-Channel Enhancement-Mode Vertical DMOS FET -TO-92-3
Microchip
TP0620N3-G
--
Microchip
