Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQS850EN-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQS850EN-T1_GE3
Description
MOSFET N-Channel 60V AEC-Q101 Qualified
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-Channel |
| Power | 33W |
| Continuous Drain Current | 12A |
| Gate Charge | 41nC @ 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,263
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.9649 | |
| 10+ | $ 1.2421 | |
| 100+ | $ 0.8313 | |
| 500+ | $ 0.6531 | |
| 1000+ | $ 0.5222 | |
| 5000+ | $ 0.4888 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSQS966ENW-T1_GE3
Mosfet Array 2 N-Channel (Dual) 60V 6A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8W
VISHAY
SQS966ENW-T1_GE3
连续漏极电流Id：6A Pd-功率耗散(Max)：27.8W Rds On(Max)@Id,Vgs：36mΩ 漏源极电压Vds：60V 栅极电压Vgs：1.5V
VISHAY
SQSA12CENW-T1_GE3
AUTOMOTIVE N-CHANNEL 100 V (D-S)
VISHAY
SQSA70CENW-T1_GE3
--
VISHAY
