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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SQJB60EP-T1_GE3

Manufacturer

VISHAY

Manufacturer Product Number

SQJB60EP-T1_GE3

Description

MOSFET-阵列-2-N-通道（双）-60V-30A（Tc）-48W-表面贴装型-PowerPAK®-SO-8-双

Manufacturer Standard Lead Time

5-7个

Detailed Description

MOSFET-阵列-2-N-通道（双）-60V-30A（Tc）-48W-表面贴装型-PowerPAK®-SO-8-双

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Drain-Source Voltage	60 V
Threshold Voltage	2.5 V @ 250 μA
Operating Temperature	-55℃ ~ 175℃
Continuous Drain Current	30 A
Type	Dual N-Channel
Input Capacitance	1600pF@25V
Power	48W
On-Resistance	12mΩ @ 10A, 10V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 50

Quantity	Unit Price	Ext Price
1+	$ 0.8300
10+	$ 0.8105
30+	$ 0.7965

Price For：Each

Minimum:1/Multiple:1

Total amount:

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SQJB68EP-T1_GE3

Mosfet Array 2 N-Channel (Dual) 100V 11A (Tc) 27W Surface Mount PowerPAK® SO-8 Dual

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