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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SQJB42EP-T1_GE3

Manufacturer

VISHAY

Manufacturer Product Number

SQJB42EP-T1_GE3

Description

Vishay 双 N沟道 MOSFET SQJB42EP-T1_GE3, 30 A, Vds=40 V, 8引脚 SO封装

Manufacturer Standard Lead Time

10-15

Detailed Description

Vishay 双 N沟道 MOSFET SQJB42EP-T1_GE3, 30 A, Vds=40 V, 8引脚 SO封装

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃ ~ 175℃
Continuous Drain Current	30 A
Threshold Voltage	3.5V@250µA
Drain-Source Voltage	40V
Type	Dual N-Channel
Power	48W
Input Capacitance	1500pF@25V
On-Resistance	9.5mΩ@10A, 10V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 5,548

Quantity	Unit Price	Ext Price
3000+	$ 0.8801
6000+	$ 0.8216
9000+	$ 0.8202

Price For：Each

Minimum:1/Multiple:1

Total amount:

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