Manufacturer
VISHAYManufacturer Product Number
SQJ960EP-T1_GE3
Description
Vishay 双 Si N沟道 MOSFET SQJ960EP-T1_GE3, 8 A, Vds=60 V, 8引脚 PowerPAK SO封装
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Continuous Drain Current | 8A |
| Type | Dual N-Channel |
| Power | 34 watt |
| Input Capacitance | 735pF@25V |
| On-Resistance | 36mΩ @ 5.3A, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 5.0410 | |
| 10+ | $ 3.2669 | |
| 100+ | $ 2.2531 | |
| 500+ | $ 1.8632 |
Minimum:1/Multiple:1
Total amount: