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SQJ960EP-T1_GE3

Manufacturer

VISHAY

Manufacturer Product Number

SQJ960EP-T1_GE3

Description

Vishay 双 Si N沟道 MOSFET SQJ960EP-T1_GE3, 8 A, Vds=60 V, 8引脚 PowerPAK SO封装

Manufacturer Standard Lead Time

10-15

Detailed Description

Vishay 双 Si N沟道 MOSFET SQJ960EP-T1_GE3, 8 A, Vds=60 V, 8引脚 PowerPAK SO封装

Datasheet

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components
Drain-Source Voltage 60 V
Threshold Voltage 2.5 V @ 250 μA
Operating Temperature -55℃ ~ 175℃
Continuous Drain Current 8A
Type Dual N-Channel
Power 34 watt
Input Capacitance 735pF@25V
On-Resistance 36mΩ @ 5.3A, 10V

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 1,532

Quantity Unit Price Ext Price
1+ $ 5.0410
10+ $ 3.2669
100+ $ 2.2531
500+ $ 1.8632
Price For:Each

Minimum:1/Multiple:1

Total amount:

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