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SQJ412EP-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQJ412EP-T1_GE3
Description
Vishay SQ Rugged 系列 Si N沟道 MOSFET SQJ412EP-T1_GE3, 32 A, Vds=40 V, 5引脚 PowerPAK SO-8L封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 40V |
| Power | 83W |
| Continuous Drain Current | 32A |
| Gate Charge | 120nC@10V |
| On-Resistance | 4.1mΩ@10.3A，10V |
| Input Capacitance | 5950pF@20V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 27,793
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 3000+ | $ 1.7142 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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