Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQD50P08-25L_GE3
Manufacturer
VISHAYManufacturer Product Number
SQD50P08-25L_GE3
Description
MOSFET
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Drain-Source Voltage | 80 V |
| Type | P-Channel |
| Continuous Drain Current | 50A |
| Power | 136 W |
| Gate Charge | 137nC@10V |
| On-Resistance | 31mΩ |
| Input Capacitance | 5350pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,122
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.8841 | |
| 10+ | $ 1.6209 | |
| 30+ | $ 1.4065 | |
| 100+ | $ 1.2129 | |
| 500+ | $ 1.1377 | |
| 1000+ | $ 1.1071 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SQD70140EL
--
LEIDITECH
SQD70140EL_GE3
Automotive N-Channel 100 V (D-S) 175 C MOSFET
VISHAY
SQD70140EL_GE3
FET类型：N-Channel 漏源极电压Vds：100V 连续漏极电流Id：30A(Tc) 栅极电压Vgs：±20V Rds On(Max)@Id,Vgs：15mΩ@30A,10V
VISHAY
SQD70140EL_GE3
Automotive N-Channel 100 V (D-S) 175 C MOSFET
VISHAY
