Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQD40081EL_GE3
Manufacturer
VISHAYManufacturer Product Number
SQD40081EL_GE3
Description
MOSFET -40V Vds; +/-20V Vgs TO-252; -50A Id
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Drain-Source Voltage | 40V |
| Power | 71W |
| Continuous Drain Current | 50A |
| Gate Charge | 210nC@10V |
| On-Resistance | 8.5mΩ@25A，10V |
| Input Capacitance | 9950pF@25V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSQD40131EL_GE3
表面贴装 P 沟道 40V 50A（Tc） 62W（Tc） TO-252AA
VISHAY
SQD40131EL_GE3
MOSFET P-CHAN 40V D-S TO-252
VISHAY
SQD40N06-14L_GE3
Vishay SQ Rugged 系列 Si N沟道 MOSFET SQD40N06-14L_GE3, 40 A, Vds=60 V, 3引脚 TO-252封装
VISHAY
SQD40N06-14L_GE3
MOSFET
VISHAY
