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SQ4920EY-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQ4920EY-T1_GE3
Description
Vishay 双 Si N沟道 MOSFET SQ4920EY-T1_GE3, 8 A, Vds=30 V, 8引脚 SOIC封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 8A |
| Type | Dual N-Channel |
| Power | 4.4W |
| Input Capacitance | 1465pF@15V |
| On-Resistance | 14.5mΩ@6A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
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In Stock: 0
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|---|
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