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SISS27ADN-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SISS27ADN-T1-GE3
Description
MOSFET P-Chan 30V PowerPAK 1212-8S
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.2 V @ 250 μA |
| Continuous Drain Current | 50A |
| Power | 57W |
| Gate Charge | 55nC@4.5V |
| On-Resistance | 5.1mΩ@15A，10V |
| Input Capacitance | 4660pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 18,033
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6752 | |
| 10+ | $ 1.0528 | |
| 100+ | $ 0.7144 | |
| 500+ | $ 0.5570 | |
| 1000+ | $ 0.5194 | |
| 5000+ | $ 0.4804 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSISS27DN-T1-GE3
MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
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SISS27DN-T1-GE3
表面贴装型-P-通道-30V-50A（Tc）-4.8W（Ta）-57W（Tc）-PowerPAK®-1212-8S（3.3x3.3）
VISHAY
SISS27DN-T1-GE3
MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
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SISS30ADN-T1-GE3
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VISHAY