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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISA18ADN-T1-GE3

Manufacturer

VISHAY

Manufacturer Product Number

SISA18ADN-T1-GE3

Description

场效应管(MOSFET) 3.2W；19.8W 30V 38.3A 1个N沟道 PowerPAK1212-8

Manufacturer Standard Lead Time

5-7个

Detailed Description

场效应管(MOSFET) 3.2W；19.8W 30V 38.3A 1个N沟道 PowerPAK1212-8

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Type	N-channel
Drain-Source Voltage	30V
Gate Charge	21.5nC@10V
Threshold Voltage	2.4V @ 250µA
On-Resistance	7.5mΩ @ 10A, 10V
Power	3.2W,19.8W
Input Capacitance	1000pF@15V
Continuous Drain Current	38.3A

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 2,455

Quantity	Unit Price	Ext Price
5+	$ 0.2688
50+	$ 0.2172
150+	$ 0.1950
500+	$ 0.1518
3000+	$ 0.1406
6000+	$ 0.1337

Price For：Each

Minimum:1/Multiple:1

Total amount:

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