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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIS862DN-T1-GE3

Manufacturer

VISHAY

Manufacturer Product Number

SIS862DN-T1-GE3

Description

场效应管(MOSFET) 3.7W；52W 60V 40A 1个N沟道

Manufacturer Standard Lead Time

5-7个

Detailed Description

场效应管(MOSFET) 3.7W；52W 60V 40A 1个N沟道

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Drain-Source Voltage	60 V
Type	N-channel
Gate Charge	32nC @ 10V
Continuous Drain Current	40 A
Threshold Voltage	2.6V@250μA
Power	3.7W, 52W
On-Resistance	8.5mΩ@20A，10V
Input Capacitance	1320pF@30V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 112

Quantity	Unit Price	Ext Price
1+	$ 0.7562
10+	$ 0.7380
30+	$ 0.7269
100+	$ 0.7144

Price For：Each

Minimum:1/Multiple:1

Total amount:

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