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SIRA88DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIRA88DP-T1-GE3
Description
Vishay N沟道 MOSFET SIRA88DP-T1-GE3, 45.5 A, Vds=30 V, 8引脚 SO封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 25W |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.4V @ 250µA |
| Gate Charge | 12.5nC@4.5V |
| Continuous Drain Current | 45.5A |
| On-Resistance | 6.7mΩ@10A, 10V |
| Input Capacitance | 985pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 23,473
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.9441 | |
| 10+ | $ 0.5779 | |
| 100+ | $ 0.3774 | |
| 500+ | $ 0.2869 | |
| 1000+ | $ 0.2228 | |
| 5000+ | $ 0.1950 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSIRA90DP-T1-GE3
表面贴装 N 沟道 30V 100A（Tc） 104W（Tc） PowerPAK® SO-8
VISHAY
SIRA90DP-T1-GE3
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VISHAY
SIRA90DP-T1-GE3
表面贴装 N 沟道 30V 100A（Tc） 104W（Tc） PowerPAK® SO-8
VISHAY
SIRA90DP-T1-RE3
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VISHAY