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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIRA18BDP-T1-GE3

Manufacturer

VISHAY

Manufacturer Product Number

SIRA18BDP-T1-GE3

Description

场效应管(MOSFET) 3.8W；17W 30V 19A；40A 1个N沟道 PowerPAK-SO-8

Manufacturer Standard Lead Time

5-7个

Detailed Description

场效应管(MOSFET) 3.8W；17W 30V 19A；40A 1个N沟道 PowerPAK-SO-8

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Type	1 N-channel
Operating Temperature	-55 ℃ ~ +150 ℃
Drain-Source Voltage	30V
Threshold Voltage	2.4V @ 250μA
Gate Charge	19 nC @ 10 V
Continuous Drain Current	19A, 40A
Input Capacitance	680pF @ 15V
Power	3.8W,17W
On-Resistance	6.83mΩ@10A,10V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 820

Quantity	Unit Price	Ext Price
5+	$ 0.2785
50+	$ 0.2228
150+	$ 0.1991
500+	$ 0.1657
3000+	$ 0.1518
6000+	$ 0.1448

Price For：Each

Minimum:1/Multiple:1

Total amount:

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