Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SIR800DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIR800DP-T1-GE3
Description
MOSFET 20V 50A N-CH MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1.5V@250µA |
| Continuous Drain Current | 50A |
| Gate Charge | 133nC@10V |
| Power | 5.2W, 69W |
| On-Resistance | 2.3mΩ@15A, 10V |
| Input Capacitance | 5125pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,235
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 3000+ | $ 1.1739 | |
| 6000+ | $ 1.1447 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SIR802DP-T1-GE3-HXY
--
HUAXUANYANG
SIR804DP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8
VISHAY
SIR818DP-T1-GE3
Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8
VISHAY
SIR826ADP-T1-GE3
场效应管(MOSFET) 6.25W；104W 80V 60A 1个N沟道 PowerPAK-SO-8
VISHAY
