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SIR167DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIR167DP-T1-GE3
Description
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -120A
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 60A |
| Gate Charge | 111nC @ 10V |
| On-Resistance | 5.5mΩ @ 15A, 10V |
| Power | 65.8W |
| Input Capacitance | 4380pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,997
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.0235 | |
| 10+ | $ 0.8592 | |
| 30+ | $ 0.7687 | |
| 100+ | $ 0.6308 | |
| 500+ | $ 0.5890 | |
| 1000+ | $ 0.5682 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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MOSFET 30V 24A N-Channel
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