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SIDR680DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SIDR680DP-T1-GE3
Description
N-Channel 80 V (D-S) MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 80 V |
| Gate Charge | 105 nC @ 10 V |
| Threshold Voltage | 3.4 V @ 250 µA |
| Power | 6.25W, 125W |
| On-Resistance | 2.9mΩ@20A，10V |
| Input Capacitance | 5150pF@40V |
| Continuous Drain Current | 32.8A, 100A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
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Standard Inserts
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Standard Inserts
