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SI8497DB-T2-E1
Manufacturer
VISHAYManufacturer Product Number
SI8497DB-T2-E1
Description
MOSFET -30V 53mOhm@4.5V 13A P-Ch G-III
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 1.1 V @ 250 µA |
| Continuous Drain Current | 13A |
| Gate Charge | 49nC@10V |
| Input Capacitance | 1320 pF @ 15 V |
| Power | 2.77W,13W |
| On-Resistance | 53mΩ@1.5A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.7031 | |
| 10+ | $ 1.0695 | |
| 100+ | $ 0.6963 | |
| 500+ | $ 0.5361 | |
| 1000+ | $ 0.4846 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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