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SI7942DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7942DP-T1-GE3
Description
MOSFET Dual N-Ch 100V 49mohm @ 10V
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Drain-Source Voltage | 100 V |
| Type | Dual N-Channel |
| Power | 1.4W |
| Continuous Drain Current | 3.8 A |
| On-Resistance | 49mΩ@5.9A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,686
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 4.6065 | |
| 10+ | $ 3.1290 | |
| 100+ | $ 2.3311 | |
| 500+ | $ 2.1055 | |
| 1000+ | $ 2.0387 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI7949DP-T1-E3
MOSFET DUAL P-CH 60V (D-S)
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SI7949DP-T1-GE3
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SI7949DP-T1-GE3
MOSFET 60V 5.0A 3.5W 64mohm @ 10V
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SI7949DP-T1-GE3
MOSFET 60V 5.0A 3.5W 64mohm @ 10V
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