Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI7884BDP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7884BDP-T1-GE3
Description
场效应管(MOSFET) 4.6W；46W 40V 58A 1个N沟道 PowerPAK-SO-8
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Type | N-channel |
| Drain-Source Voltage | 40V |
| Gate Charge | 77nC@10V |
| Continuous Drain Current | 58A |
| Power | 4.6 W, 46 W |
| On-Resistance | 7.5 mΩ @ 16 A, 10 V |
| Input Capacitance | 3540 pF @ 20 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5877 | |
| 3000+ | $ 0.5598 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI7884DP-T1-GE3-VB
--
Vbsemi
SI7892BDP-T1-E3
场效应管(MOSFET) 1.8W 30V 15A 1个N沟道 SO-8
VISHAY
SI7898DP-T1-GE3
场效应管(MOSFET) 1.9W 150V 3A 1个N沟道 PowerPAK-SO-8
VISHAY
SI7898DP-T1-GE3
MOSFET 150V 4.8A 5.0W 85mohm @ 10V
VISHAY
