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SI7846DP-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI7846DP-T1-E3
Description
场效应管(MOSFET) 1.9W 150V 4A 1个N沟道 PowerPAK1212-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Continuous Drain Current | 4A |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Threshold Voltage | 4.5V@250μA |
| Drain-Source Voltage | 150V |
| Gate Charge | 36nC@10V |
| Power | 1.9W |
| On-Resistance | 50mΩ@5A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 15
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8453 | |
| 10+ | $ 0.8286 | |
| 30+ | $ 0.8188 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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场效应管(MOSFET) 1.9W 150V 4A 1个N沟道 SO-8
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