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SI7456DP-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI7456DP-T1-E3
Description
场效应管(MOSFET) 1.9W 100V 5.7A 1个N沟道 PowerPAK-SO-8
Manufacturer Standard Lead Time
2-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Type | N-channel |
| Drain-Source Voltage | 100 V |
| Gate Charge | 44nC@10V |
| Power | 1.9W |
| Continuous Drain Current | 5.7A |
| On-Resistance | 25 mΩ @ 9.3 A, 10 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,775
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.6348 | |
| 10+ | $ 1.4190 | |
| 30+ | $ 1.1725 | |
| 100+ | $ 1.1196 | |
| 300+ | $ 1.0667 | |
| 1000+ | $ 1.0124 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI7456DP-T1-GE3
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VISHAY
SI7456DP-T1-GE3
MOSFET N-CH 100V 5.7A PPAK SO-8
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