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SI7431DP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7431DP-T1-GE3
Description
场效应管(MOSFET) 1.9W 200V 2.2A 1个P沟道 PDFN-8(5.9x5.2)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Drain-Source Voltage | 200 V |
| Continuous Drain Current | 3.6A |
| On-Resistance | 147mΩ |
| Power | 1.9W |
| Gate Charge | 135nC@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,656
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.4385 | |
| 100+ | $ 1.2394 | |
| 750+ | $ 1.1168 | |
| 1500+ | $ 1.0653 | |
| 3000+ | $ 1.0207 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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场效应管(MOSFET) 1.9W 200V 3.2A 1个N沟道 PowerPAK-SO-8
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