Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI7252ADP-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI7252ADP-T1-GE3
Description
DUAL N-CHANNEL 100-V (D-S) MOSFE
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 4V@250µA |
| Drain-Source Voltage | 100 V |
| Type | Dual N-Channel |
| On-Resistance | 18.6mΩ @ 10A, 10V |
| Continuous Drain Current | 9.3A, 28.7A |
| Power | 3.6W, 33.8W |
| Input Capacitance | 1266pF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI7252DP-T1-GE3
MOSFET-阵列-2-N-通道（双）-100V-36.7A-46W-表面贴装型-PowerPAK®-SO-8-双
VISHAY
SI7252DP-T1-GE3
MOSFET 100V 36.7A 46W 0.017ohms @ 10V
VISHAY
SI7252DP-T1-GE3
MOSFET 100V 36.7A 46W 0.017ohms @ 10V
VISHAY
SI7272DP-T1-GE3
场效应管(MOSFET) 22W 30V 25A 2个N沟道 SO-8
VISHAY
