Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI6968BEDQ-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI6968BEDQ-T1-E3
Description
场效应管(MOSFET) 1W 20V 5.2A 2个N沟道 TSSOP-8
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Power | 1 W |
| Drain-Source Voltage | 20V |
| Continuous Drain Current | 5.2A |
| Type | 2 N-Channel (Dual) Common Drain |
| Threshold Voltage | 1.6V @ 250μA |
| On-Resistance | 22mΩ@6.5A,4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 62
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.7924 | |
| 10+ | $ 0.7743 | |
| 30+ | $ 0.7631 | |
| 100+ | $ 0.6740 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI6968BEDQ-T1-GE3
--
VISHAY
SI7006-A20-IM1
SENS HUMI/TEMP 3.6V I2C 5% 6DFN
Silicon
SI7006-A20-IM1R
Digital I2C 4% RH + Temp Sensor + Cover
Silicon
SI7006-A20-IM1R
--
Silicon
